vs-hfa06tb120pbf www.vishay.com vishay semiconductors revision: 23-may-11 1 document number: 94038 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseuropa@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 hexfred ? , ultrafast soft recovery diode, 6 a features ? ultrafast and ultrasoft recovery ? very low i rrm and q rr ? compliant to rohs directive 2002/95/ec ? designed and qualified for industrial level benefits ? reduced rfi and emi ? reduced power loss in diode and switching transistor ? higher frequency operation ? reduced snubbing ? reduced parts count description vs-hfa06tb120pbf is a state of the art ultrafast recovery diode. employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any re ctifier previously available. with basic ratings of 1200 v and 6 a continuous current, the vs-hfa06tb120pbf is especially well suited for use as the companion diode for igbts an d mosfets. in addition to ultrafast recovery time, the hexfred ? product line features extremely low values of peak recovery current (i rrm ) and does not exhibit any tendency to snap-off during the t b portion of recovery. the hexfred features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. these hexfred advantages can help to significantly reduce snubbing, component count and heatsink sizes. the hexf red vs-hfa06tb120pbf is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applicatio ns where high speed, high efficiency is needed. product summary package to-220ac i f(av) 6 a v r 1200 v v f at i f 3.0 v t rr (typ.) 26 ns t j max. 150 c diode variation single die base cathode 2 13 cathode anode to-220ac absolute maximum ratings parameter symbol test conditions values units cathode to anode voltage v r 1200 v maximum continuous forward current i f t c = 100 c 6 a single pulse forward current i fsm 80 maximum repetitive forward current i frm 24 maximum power dissipation p d t c = 25 c 62.5 w t c = 100 c 25 operating junction and storage temperature range t j , t stg - 55 to + 150 c
vs-hfa06tb120pbf www.vishay.com vishay semiconductors revision: 23-may-11 2 document number: 94038 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseuropa@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 electriacl specifications (t j = 25 c unless otherwise specified) parameter symbol test conditio ns min. typ. max. units cathode to anode breakdown voltage v br i r = 100 a 1200 - - v maximum forward voltage v fm i f = 6.0 a - 2.7 3.0 i f = 12 a - 3.5 3.9 i f = 6.0 a, t j = 125 c - 2.4 2.8 maximum reverse leakage current i rm v r = v r rated - 0.26 5.0 a t j = 125 c, v r = 0.8 x v r rated - 110 500 junction capacitance c t v r = 200 v - 9.0 14 pf series inductance l s measured lead to lead 5 mm from package body - 8.0 - nh dynamic recovery characteristics (t j = 25 c unless otherwise specified) parameter symbol test conditi ons min. typ. max. units reverse recovery time t rr i f = 1.0 a, di f /dt = 200 a/s, v r = 30 v - 26 - ns t rr1 t j = 25 c i f = 6.0 a di f /dt = 200 a/s v r = 200 v -5380 t rr2 t j = 125 c - 87 130 peak recovery current i rrm1 t j = 25 c - 4.4 8.0 a i rrm2 t j = 125 c - 5.0 9.0 reverse recovery charge q rr1 t j = 25 c - 116 320 nc q rr2 t j = 125 c - 233 585 peak rate of recovery current during t b di (rec)m /dt1 t j = 25 c - 180 - a/s di (rec)m /dt2 t j = 125 c - 100 - thermal - mechanical specifications parameter symbol test conditio ns min. typ. max. units lead temperature t lead 0.063" from case (1.6 mm) for 10 s - - 300 c thermal resistance, junction to case r thjc --2.0 k/w thermal resistance, junction to ambient r thja typical socket mount - - 80 thermal resistance, case to heatsink r thcs mounting surface, flat, smooth and greased - 0.5 - weight -2.0- g -0.07- oz. mounting torque 6.0 (5.0) - 12 (10) kgf cm (lbf in) marking device case st yle to-220ac hfa06tb120
vs-hfa06tb120pbf www.vishay.com vishay semiconductors revision: 23-may-11 3 document number: 94038 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseuropa@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - typical forward voltage drop characteristics fig. 2 - typical reverse current vs. reverse voltage fig. 3 - typical junction ca pacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics 1 10 t j = 150 c t j = 125 c t j = 25 c 0 6 2 3 v f - forward voltage drop (v) i f - instantaneous forward current (a) 100 14 0.1 5 0.01 0.1 1 10 100 0 200 600 v r - reverse voltage (v) i r - reverse current (a) t j = 150 c t j = 125 c t j = 25 c 1000 800 1400 1200 400 1000 t j = 100 c 10 100 1 10 100 1000 1 v r - reverse voltage (v) c t - junction capacitance (pf) t j = 25 c 10 000 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t 1 - rectangular pulse duration (s) z thjc - thermal response single pulse (thermal resistance) p dm t 1 t 2 notes: 1. duty factor d = t 1 /t 2 2. peak t j = p dm x z thjc + t c 10 d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01 10 100
vs-hfa06tb120pbf www.vishay.com vishay semiconductors revision: 23-may-11 4 document number: 94038 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseuropa@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - typical reverse recovery time vs. di f /dt fig. 6 - typical recovery current vs. di f /dt fig. 7 - typical stored charge vs. di f /dt fig. 8 - typical di (rec)m /dt vs. di f /dt 110 90 20 100 1000 di f /dt (a/s) t rr (ns) 60 v r = 200 v t j = 125 c t j = 25 c 100 40 80 30 50 70 i f = 6 a i f = 4 a 25 20 0 100 1000 di f /dt (a/s) i rr (a) 10 i f = 6 a i f = 4 a v r = 200 v t j = 125 c t j = 25 c 5 15 1000 800 100 1000 di f /dt (a/s) q rr (nc) i f = 6 a i f = 4 a v r = 200 v t j = 125 c t j = 25 c 400 200 600 0 1000 100 100 1000 di f /dt (a/s) di (rec)m /dt (a/s) v r = 200 v t j = 125 c t j = 25 c i f = 6 a i f = 4 a 10 000 10
vs-hfa06tb120pbf www.vishay.com vishay semiconductors revision: 23-may-11 5 document number: 94038 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseuropa@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 9 - reverse recovery parameter test circuit fig. 10 - reverse recovery waveform and definitions irfp250 d.u.t. l = 70 h v r = 200 v 0.01 g d s di f /dt adju s t q rr 0.5 i rrm di (rec)m /dt 0.75 i rrm i rrm t rr t b t a i f di f /dt 0 (1) (2) (3) (4) (5) (1) di f /dt - rate of change of current through zero cro ss ing (2) i rrm - peak rever s e recovery current (3) t rr - rever s e recovery time mea s ured from zero cro ss ing point of negative going i f to point where a line pa ss ing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current. (4) q rr - area under curve dened by t rr and i rrm t rr x i rrm 2 q rr = (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr
vs-hfa06tb120pbf www.vishay.com vishay semiconductors revision: 23-may-11 6 document number: 94038 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseuropa@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table links to related documents dimensions www.vishay.com/doc?95221 part marking information www.vishay.com/doc?95224 2 - hexfred ? family 4 - current rating (06 = 6 a) 4 5 - package: 4 tb = to-220ac 3 - electron irradiated 6 7 - voltage rating (120 = 1200 v) tube standard pack quantity: 50 pieces 1 - vishay semiconductors product - pbf = lead (pb)-free device code 5 1 3 2 4 6 7 vs- hf a 06 tb 120 pbf
document number: 95221 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 07-mar-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 to-220ac outline dimensions vishay semiconductors dimensions in millimeters and inches notes (1) dimensioning and tolerancin g as per asme y14.5m-1994 (2) lead dimension and fini sh uncontrolled in l1 (3) dimension d, d1 and e do not in clude mold flash. mold flash shall not exceed 0.127 mm (0. 005") per side. these dimensions are m easured at the outermost extrem es of the plastic body (4) dimension b1, b3 and c1 apply to base metal only (5) controlling dimension: inches (6) thermal pad contour optional with in dimensions e, h1, d2 and e1 (7) dimension e2 x h1 define a zone where stamping and singulation irregularities are allowed (8) outline conforms to jedec to-220, d2 (minimum) where dimensions are derived from the actual package outline symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.25 4.65 0.167 0.183 e1 6.86 8.89 0.270 0.350 6 a1 1.14 1.40 0.045 0.055 e2 - 0.76 - 0.030 7 a2 2.56 2.92 0.101 0.115 e 2.41 2.67 0.095 0.105 b 0.69 1.01 0.027 0.040 e1 4.88 5.28 0.192 0.208 b1 0.38 0.97 0.015 0.038 4 h1 6.09 6.48 0.240 0.255 6, 7 b2 1.20 1.73 0.047 0.068 l 13.52 14.02 0.532 0.552 b3 1.14 1.73 0.045 0.068 4 l1 3.32 3.82 0.131 0.150 2 c 0.36 0.61 0.014 0.024 l3 1.78 2.13 0.070 0.084 c1 0.36 0.56 0.014 0.022 4 l4 0.76 1.27 0.030 0.050 2 d 14.85 15.25 0.585 0.600 3 ? p 3.54 3.73 0.139 0.147 d1 8.38 9.02 0.330 0.355 q 2.60 3.00 0.102 0.118 d2 11.68 12.88 0.460 0.507 6 ? 90 to 93 90 to 93 e 10.11 10.51 0.398 0.414 3, 6 13 2 d d1 h1 q detail b c a b l e1 lead tip l4 l3 e e2 ? p 0.015 a b mm 0.014 a b mm s eating plane c a2 a1 a a a lead assignments diode s 1 + 2 - cathode 3 - anode conforms to jedec outline to-220ac (6) (6) (7) (6) (7) view a - a e1 (6) d2 (6) h1 thermal pad e detail b d l1 d 123 c c 2 x b2 2 x b
document number: 91 000 www.vishay.com revision: 11-mar-11 1 disclaimer legal disclaimer notice vishay all product, product specifications and data ar e subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicab le law, vishay disc laims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of pro ducts for certain types of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in gene ric applications. such statements are not binding statements about the suitability of products for a partic ular application. it is the customers responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product co uld result in person al injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding the design or manufact ure of the part. please contact authorized vishay personnel t o obtain written terms and conditions regarding products designed fo r such applications. no license, express or implied, by estoppel or otherwise, to any intelle ctual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.
|
